| PART |
Description |
Maker |
| IRFP054N |
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A)
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?)
IC/71054 24P P DIP INTERFACE 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.012ohm，身份证\u003d 81A条?
|
IRF[International Rectifier]
Power MOSFET
International Rectifier, Corp.
|
| IRFR4104PBF IRFU4104PBF IRFR4104TRL IRFR4104TRR |
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mΩ , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mヘ , ID = 42A )
42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A )
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
|
International Rectifier
|
| IRFI740G IRFI740 IRFI740GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A)
|
IRF[International Rectifier]
|
| IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| IRFIBC20G IRFIBC20 IRFIBC20GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SSG4512CE SSG4512CE-15 |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
|
IRF[International Rectifier]
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
